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Infineon BSM150GB120DN2F Module
Infineon BSM150GB120DN2F Module
BRAND :
Infineon
Manufacturer:
Infineon
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Description
Description
Details
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Details
Product:
IGBT Silicon Modules
Configuration:
Half Bridge
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.5 V
Continuous Collector Current at 25 C:
210 A
Gate-Emitter Leakage Current:
320 nA
Pd - Power Dissipation:
1.25 kW
Package/Case:
Half Bridge2
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Height:
30 mm
Length:
106.4 mm
Technology:
Si
Width:
61.4 mm
Brand:
Infineon Technologies
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
10
Subcategory:
IGBTs
Part # Aliases:
BSM150GB120DN2HOSA1 SP000095942 BSM150GB120DN2HOSA1
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