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Infineon BSM300GA120DN2FS_E3256 Igbt Modules
Infineon BSM300GA120DN2FS_E3256 Igbt Modules
BRAND :
Infineon
Manufacturer:
Infineon
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Description
Description
Details
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Details
Product:
IGBT Silicon Modules
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.5 V
Continuous Collector Current at 25 C:
430 A
Gate-Emitter Leakage Current:
0.32 uA
Pd - Power Dissipation:
2.5 kW
Package/Case:
62 mm
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Technology:
Si
Brand:
Infineon Technologies
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
1
Subcategory:
IGBTs
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