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Infineon FF1200R17KE3 Igbt Unit
Infineon FF1200R17KE3 Igbt Unit
BRAND :
Infineon
anufacturer:
Infineon
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Description
Description
Details
anufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
N
Configuration:
Dual
Collector- Emitter Voltage VCEO Max:
1700 V
Collector-Emitter Saturation Voltage:
2 V
Continuous Collector Current at 25 C:
1600 A
Gate-Emitter Leakage Current:
400 nA
Pd - Power Dissipation:
5.95 kW
Package/Case:
IHM130-10
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 125 C
Packaging:
Tray
Height:
38 mm
Length:
140 mm
Width:
130 mm
Brand:
Infineon Technologies
Mounting Style:
SMD/SMT
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
2
Subcategory:
IGBTs
Part # Aliases:
FF1200R17KE3NOSA1 SP000100586 FF1200R17KE3NOSA1
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